Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 5A
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2796S
|
Renesas Electronics | 功能相似 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
|
|||
2SK2796S-E
|
Renesas Electronics | 功能相似 | TO-252 |
Trans MOSFET N-CH 60V 5A 3Pin(2+Tab) DPAK(S)
|
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