Technical parameters/dissipated power: 20 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 180pF @10V(Vds)
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 20000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2796(S)
|
Renesas Electronics | 功能相似 | DPAK |
DPAK(S) N-CH 60V 5A
|
||
2SK2796S
|
Renesas Electronics | 功能相似 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
|
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