Technical parameters/drain source resistance: 85 Ω
Technical parameters/dissipated power: 300 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: 30 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 8pF @10V(Vgs)
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.8 mm
External dimensions/width: 4.2 mm
External dimensions/height: 5.2 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBFJ174,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ174,215 晶体管, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET
|
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