Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 187 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 80 @5mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5237DW1T1
|
ON Semiconductor | 功能相似 | SOT-363-6 |
Dual Bias Resistor Transistors
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MUN5237DW1T1
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Leshan Radio | 功能相似 |
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MUN5237DW1T1G
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ON Semiconductor | 类似代替 | SOT-363-6 |
ON Semiconductor ### 数字晶体管，On Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
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