Technical parameters/rated voltage (DC): | 50.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.385 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 385 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363-6 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-363-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5237DW1T1
|
ON Semiconductor | 类似代替 | SOT-363-6 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
||
MUN5237DW1T1
|
Leshan Radio | 类似代替 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
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