Technical parameters/frequency: 650 MHz
Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 4.00 mA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 120 @4mA, 10V
Technical parameters/rated power (Max): 225 mW
Technical parameters/DC current gain (hFE): 120
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTH11
|
Fairchild | 功能相似 | SOT-23-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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