Technical parameters/frequency: 650 MHz
Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 60 @4mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 60 @4mA, 10V
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTH10-4LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 25 V 225 mW 表面贴装 硅 晶体管 - SOT-23
|
||
MMBTH10-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
三极管(BJT) MMBTH10-7-F SOT-23
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review