Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.2 W
Technical parameters/gain bandwidth product: 130 MHz
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 100 @2A, 2V
Technical parameters/rated power (Max): 1.2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: E-Line-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: E-Line-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT853TA
|
Zetex | 功能相似 | SOT-223 |
三极管(BJT) FZT853TA SOT-223-4
|
||
|
|
Diodes | 功能相似 | SOT-223-4 |
双极晶体管 - 双极结型晶体管(BJT) NPN High Current
|
||
ZTX853
|
Diodes Zetex | 类似代替 | TO-92-3 |
ZTX853 编带
|
||
ZTX853
|
Diodes | 类似代替 | E-Line-3 |
ZTX853 编带
|
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