Technical parameters/dissipated power: 1.2 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 100 @2A, 2V
Technical parameters/rated power (Max): 1.2 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 200℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT853TA
|
Zetex | 功能相似 | SOT-223 |
三极管(BJT) FZT853TA SOT-223-4
|
||
|
|
Diodes | 功能相似 | SOT-223-4 |
双极晶体管 - 双极结型晶体管(BJT) NPN High Current
|
||
ZTX853STZ
|
Diodes | 类似代替 | E-Line-3 |
ZTX853 系列 NPN 4 A 100 V 硅 平面 中等功率 晶体管 - TO-92-3
|
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