Technical parameters/dissipated power: 710mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 531pF @10V(Vds)
Technical parameters/rated power (Max): 710 mW
Technical parameters/dissipated power (Max): 710mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: WDFN-6
External dimensions/packaging: WDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTLJF3117PT1G
|
ON Semiconductor | 类似代替 | WDFN-6 |
P 通道 MOSFET,带肖特基二极管,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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