Technical parameters/drain source resistance: 100 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4.10 A, -3.30 A
Technical parameters/Input capacitance (Ciss): 531pF @10V(Vds)
Technical parameters/rated power (Max): 710 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 710mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: WDFN-6
External dimensions/length: 2 mm
External dimensions/width: 2 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: WDFN-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTLJF3117PTAG
|
ON Semiconductor | 类似代替 | WDFN-6 |
4.1A,-20V,P沟道MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review