Technical parameters/forward current (Max): 40 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-5
External dimensions/packaging: DO-5
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NJS | 功能相似 | 2 |
整流器 100V 35A Std. Recovery
|
||
1N1184
|
VISHAY | 功能相似 | DO-5 |
整流器 100V 35A Std. Recovery
|
||
1N1184
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
整流器 100V 35A Std. Recovery
|
||
|
|
International Rectifier | 功能相似 | DO-5 |
整流器 100V 35A Std. Recovery
|
||
1N1184
|
Vishay Semiconductor | 功能相似 | DO-5 |
整流器 100V 35A Std. Recovery
|
||
|
|
Diotec Semiconductor | 功能相似 |
广颖电整流器 Silicon Power Rectifier
|
|||
1N1184A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
广颖电整流器 Silicon Power Rectifier
|
||
|
|
VISHAY | 功能相似 | DO-5 |
广颖电整流器 Silicon Power Rectifier
|
||
1N1184A
|
Microsemi | 功能相似 | DO-5 |
广颖电整流器 Silicon Power Rectifier
|
||
40HF10
|
VISHAY | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
|
|
ETC | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
|||
40HF10
|
IRF | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
|||
40HF10
|
Vishay Semiconductor | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
40HF10
|
Vishay Intertechnology | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review