Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 35.0 A
Technical parameters/forward voltage: 1.70 V
Encapsulation parameters/Encapsulation: DO-5
External dimensions/packaging: DO-5
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NJS | 功能相似 | 2 |
整流器 100V 35A Std. Recovery
|
||
1N1184
|
VISHAY | 功能相似 | DO-5 |
整流器 100V 35A Std. Recovery
|
||
1N1184
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
整流器 100V 35A Std. Recovery
|
||
|
|
International Rectifier | 功能相似 | DO-5 |
整流器 100V 35A Std. Recovery
|
||
1N1184
|
Vishay Semiconductor | 功能相似 | DO-5 |
整流器 100V 35A Std. Recovery
|
||
|
|
Diotec Semiconductor | 功能相似 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
|||
1N1184A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
VISHAY | 功能相似 | DO-5 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
1N1184A
|
Microsemi | 功能相似 | DO-5 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
40HF10
|
VISHAY | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
|
|
ETC | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
|||
40HF10
|
IRF | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
|||
40HF10
|
Vishay Semiconductor | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
||
|
40HF10
|
Vishay Intertechnology | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 100V V(RRM), Silicon, DO-203AB, ROHS COMPLIANT, DO-5, 1Pin
|
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