Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 10 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: MP-5
External dimensions/length: 8.5 mm
External dimensions/width: 2.8 mm
External dimensions/height: 12 mm
External dimensions/packaging: MP-5
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD882
|
Kexin | 功能相似 | SOT-89 |
NPN 功率晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
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2SD882
|
ST Microelectronics | 功能相似 | TO-126-3 |
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2SD882
|
UTC | 功能相似 | TO-126 |
NPN 功率晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
|
||
2SD882
|
Micro Commercial Components | 功能相似 | SIP |
NPN 功率晶体管,STMicroelectronics ### 双极晶体管,STMicroelectronics STMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
|
||
|
|
Renesas Electronics | 功能相似 |
3000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
|||
2SD882P
|
NEC | 功能相似 |
NPN SILICON POWER TRANSISTOR
|
|||
2SD882P
|
Renesas Electronics | 功能相似 | TO-126 |
NPN SILICON POWER TRANSISTOR
|
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