Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 3A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD882
|
Kexin | 功能相似 | SOT-89 |
Trans GP BJT NPN 30V 3A 3Pin(3+Tab) TO-126
|
||
2SD882
|
ST Microelectronics | 功能相似 | TO-126-3 |
Trans GP BJT NPN 30V 3A 3Pin(3+Tab) TO-126
|
||
2SD882
|
UTC | 功能相似 | TO-126 |
Trans GP BJT NPN 30V 3A 3Pin(3+Tab) TO-126
|
||
2SD882
|
Micro Commercial Components | 功能相似 | SIP |
Trans GP BJT NPN 30V 3A 3Pin(3+Tab) TO-126
|
||
2SD882-AZ
|
Renesas Electronics | 功能相似 | MP-5 |
NPN 功率晶体管,Renesas Electronics (NEC) ### 双极晶体管,Renesas
|
||
|
|
Renesas Electronics | 功能相似 |
3000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
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