Technical parameters/frequency: 320 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2 W
Technical parameters/gain bandwidth product: 320 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 270 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 680
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: MPT-3
External dimensions/packaging: MPT-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1733TL
|
ROHM Semiconductor | 功能相似 | TUMT-3 |
PNP 功率晶体管,Rohm ### 双极晶体管,ROHM Semiconductor
|
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