Technical parameters/frequency: 320 MHz
Technical parameters/rated power: 0.8 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.8 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 270 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 680
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TUMT-3
External dimensions/length: 2.1 mm
External dimensions/width: 1.8 mm
External dimensions/height: 0.82 mm
External dimensions/packaging: TUMT-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SAR293PT100
|
ROHM Semiconductor | 功能相似 | MPT-3 |
MPT PNP 30V 1A
|
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