Technical parameters/dissipated power: 200 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJX945YTF
|
Fairchild | 功能相似 | SOT-323-3 |
声频放大器高频率振荡。集电极 - 基极电压VCBO= 60V高电流增益带宽产品fT=300MHz的(典型值)补充FJX733
|
||
FJX945YTF
|
ON Semiconductor | 功能相似 |
声频放大器高频率振荡。集电极 - 基极电压VCBO= 60V高电流增益带宽产品fT=300MHz的(典型值)补充FJX733
|
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