Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 150 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 700
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC4081T106Q
|
ROHM Semiconductor | 功能相似 | SC-70-3 |
ROHM 2SC4081T106Q 单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE
|
||
2SC4081T106S
|
ROHM Semiconductor | 功能相似 | SOT-323-3 |
通用晶体管（ 50V ， 0.15A ） General purpose transistor (50V, 0.15A)
|
||
FJX945GTF
|
Fairchild | 类似代替 | SOT-323-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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