Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | MPAK |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
|
||
2PB709AS
|
NXP | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
|
||
2PB709AS,115
|
Nexperia | 功能相似 | SOT-346 |
MPAK PNP 45V 0.1A
|
||
|
|
NXP | 功能相似 | TO-236 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
|
||
2PB709ASL,215
|
NXP | 功能相似 | SOT-23-3 |
2PB709ASL 系列 45 V 100 mA 表面贴装 PNP 通用 晶体管 - SOT-23-3
|
||
2PB709ASL,215
|
Nexperia | 功能相似 | SOT-23-3 |
2PB709ASL 系列 45 V 100 mA 表面贴装 PNP 通用 晶体管 - SOT-23-3
|
||
|
|
Philips | 类似代替 |
PNP通用晶体管 PNP general purpose transistor
|
|||
2PB709ASW
|
Nexperia | 类似代替 |
PNP通用晶体管 PNP general purpose transistor
|
|||
2PB709ASW
|
NXP | 类似代替 | SOT-323-3 |
PNP通用晶体管 PNP general purpose transistor
|
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