Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 50pF @10V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002P,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP 2N7002P,215 晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
|
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