Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1 Ω
Technical parameters/dissipated power: 0.42 W
Technical parameters/threshold voltage: 1.75 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 50pF @10V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 420 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industry, what?? Power management, automotive use, what????
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002KT1G
|
Vishay Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002KT1G. 场效应管, MOSFET, N沟道, 60V, 380mA SOT-23
|
||
2N7002P,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP 2N7002P,215 晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
|
||
2N7002P,235
|
Nexperia | 类似代替 | SOT-23-3 |
2N7002P 系列 60 V 360 mA 1.6 Ohm 表面贴装 N-沟道 Trench Mosfet - SOT-23-3
|
||
2N7002P,235
|
NXP | 类似代替 | SOT-23-3 |
2N7002P 系列 60 V 360 mA 1.6 Ohm 表面贴装 N-沟道 Trench Mosfet - SOT-23-3
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review