Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 25pF @25V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002ET1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
|
||
2V7002LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N 通道功率 MOSFET，60V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
DMG6968U-7
|
Diodes Zetex | 功能相似 | SOT-23 |
DMG6968 系列 20 V 25 mOhm N 沟道 增强模式 晶体管 SOT-23-3
|
||
DMG6968U-7
|
Diodes | 功能相似 | SOT-23-3 |
DMG6968 系列 20 V 25 mOhm N 沟道 增强模式 晶体管 SOT-23-3
|
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