Technical parameters/rated power: 1.3 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.021 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: 500 mV
Technical parameters/input capacitance: 151 pF
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6.5A
Technical parameters/rise time: 66 ns
Technical parameters/Input capacitance (Ciss): 151pF @10V(Vds)
Technical parameters/rated power (Max): 810 mW
Technical parameters/descent time: 205 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, national defense, military and aviation
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002K-7
|
Diodes Zetex | 类似代替 | SOT-23 |
2N7002K 系列 60 V 2 Ohm N 沟道 增强模式 Mosfet - SOT-23-3
|
||
BSS123-7-F
|
Diodes | 类似代替 | SOT-23-3 |
三极管
|
||
MMBF170-7-F
|
Diodes Zetex | 类似代替 | SOT-23 |
MMBF170-7-F 编带
|
||
MMBF170-7-F
|
Diodes | 类似代替 | SOT-23-3 |
MMBF170-7-F 编带
|
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