Technical parameters/rated power: 0.2 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 7.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 0.2 W
Technical parameters/threshold voltage: 2.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/Continuous drain current (Ids): 115 mA
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002K-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23-3 |
60V,0.3A,N沟道MOSFET
|
||
2N7002K-T1-GE3
|
Vishay Intertechnology | 类似代替 |
60V,0.3A,N沟道MOSFET
|
|||
2N7002KT1G
|
Vishay Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002KT1G. 场效应管, MOSFET, N沟道, 60V, 380mA SOT-23
|
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