Technical parameters/dissipated power: 1200 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1200 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3859A
|
Central Semiconductor | 功能相似 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N3859A
|
Rochester | 功能相似 |
NPN通用放大器 NPN General Purpose Amplifier
|
|||
2N4400
|
Major Brands | 功能相似 | 3 |
NTE ELECTRONICS 2N4400 晶体管, NPN, 40V
|
||
2N4400
|
Central Semiconductor | 功能相似 | TO-92 |
NTE ELECTRONICS 2N4400 晶体管, NPN, 40V
|
||
2N4400TF
|
Fairchild | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
||
|
|
ON Semiconductor | 功能相似 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
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