Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 600 mA |
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Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @150mA, 1V |
|
Technical parameters/maximum current amplification factor (hFE): | 150 |
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Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92-3 |
|
Dimensions/Length: | 4.7 mm |
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Dimensions/Width: | 3.93 mm |
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Dimensions/Height: | 4.7 mm |
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Dimensions/Packaging: | TO-92-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3859A
|
Central Semiconductor | 功能相似 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N3859A
|
Rochester | 功能相似 |
NPN通用放大器 NPN General Purpose Amplifier
|
|||
2N4400
|
Major Brands | 类似代替 | 3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4400
|
Central Semiconductor | 类似代替 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4400BU
|
Fairchild | 完全替代 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
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