Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 50 @150mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 150
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.7 mm
External dimensions/width: 3.93 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3859A
|
Central Semiconductor | 功能相似 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N3859A
|
Rochester | 功能相似 |
NPN通用放大器 NPN General Purpose Amplifier
|
|||
2N4400
|
Major Brands | 类似代替 | 3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4400
|
Central Semiconductor | 类似代替 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N4400TF
|
Fairchild | 完全替代 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
||
|
|
ON Semiconductor | 完全替代 | TO-92 |
双极晶体管 - 双极结型晶体管(BJT) NPN Transistor General Purpose
|
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