Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.1 Ω
Technical parameters/dissipated power: 0.35 W
Technical parameters/threshold voltage: 1.75 V
Technical parameters/input capacitance: 47.2 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 55pF @25V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002ET1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
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2N7002K-7
|
Diodes Zetex | 功能相似 | SOT-23 |
2N7002K 系列 60 V 2 Ohm N 沟道 增强模式 Mosfet - SOT-23-3
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2N7002K-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOT-23-3 |
60V,0.3A,N沟道MOSFET
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2N7002K-T1-GE3
|
Vishay Intertechnology | 功能相似 |
60V,0.3A,N沟道MOSFET
|
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