Technical parameters/dissipated power: 4W (Ta), 75W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rated power (Max): 4 W
Technical parameters/dissipated power (Max): 4W (Ta), 75W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 完全替代 |
Trans MOSFET N-CH 200V 9A 3Pin(2+Tab) TO-204AA
|
|||
IRF130
|
Intersil | 完全替代 |
INFINEON IRF130 晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
|
|||
IRF130
|
Motorola | 完全替代 |
INFINEON IRF130 晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
|
|||
IRF1404ZSPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF1404ZSPBF 晶体管, MOSFET, N沟道, 75 A, 40 V, 3.7 mohm, 10 V, 4 V
|
||
IRF1404ZSTRLPBF
|
Infineon | 功能相似 | TO-263-3 |
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0027 ohm, 10 V, 4 V
|
||
|
JANTXV2N6756
|
Infineon | 完全替代 | TO-204 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
|
||
JANTXV2N6756
|
International Rectifier | 完全替代 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
|
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