Technical parameters/number of pins: 2
Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/dissipated power: 75 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 650pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 75000 mW
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 完全替代 |
Trans MOSFET N-CH 200V 9A 3Pin(2+Tab) TO-204AA
|
|||
IRF130
|
Intersil | 完全替代 |
INFINEON IRF130 晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
|
|||
IRF130
|
Motorola | 完全替代 |
INFINEON IRF130 晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
|
|||
IRF1404ZSPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF1404ZSPBF 晶体管, MOSFET, N沟道, 75 A, 40 V, 3.7 mohm, 10 V, 4 V
|
||
IRF1404ZSTRLPBF
|
Infineon | 功能相似 | TO-263-3 |
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0027 ohm, 10 V, 4 V
|
||
|
JANTXV2N6756
|
Infineon | 完全替代 | TO-204 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
|
||
JANTXV2N6756
|
International Rectifier | 完全替代 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
|
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