Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Semelab | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Multicomp | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Central Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Aeroflex | 功能相似 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
|||
2N6059
|
ON Semiconductor | 功能相似 | TO-204 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
BUX48A
|
ST Microelectronics | 功能相似 | TO-3 |
NTE ELECTRONICS BUX48A Bipolar (BJT) Single Transistor, NPN, 500V, 175W, 20A, 10 hFE
|
||
BUX48A
|
ON Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS BUX48A Bipolar (BJT) Single Transistor, NPN, 500V, 175W, 20A, 10 hFE
|
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