Technical parameters/rated voltage (DC): 350 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 20 @50mA, 10V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6517TA
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N6517TA 单晶体管 双极, NPN, 400 V, 200 MHz, 625 mW, 20 hFE
|
||
2N6517TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N6517TA 单晶体管 双极, NPN, 400 V, 200 MHz, 625 mW, 20 hFE
|
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