Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 10A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 类似代替 | TO-66 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
||
2N5665
|
New Jersey Semiconductor | 类似代替 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
|||
2N5665
|
SavantIC Semiconductor | 类似代替 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
|||
2N5665
|
Microchip | 类似代替 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
|||
JANTX2N6284
|
Microsemi | 类似代替 | TO-3 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
|
|
Microchip | 类似代替 | TO-204 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
JANTX2N6284
|
M/A-Com | 类似代替 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
|||
JANTX2N6284
|
Aeroflex | 类似代替 | TO-3 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
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