Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 30 @2.5A, 4V
Technical parameters/rated power (Max): 40 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6109
|
Multicomp | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
ON Semiconductor | 功能相似 | TO-220-3 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
Magnatec | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
Rectron Semiconductor | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
TT Electronics | 功能相似 |
t-Pnp Si-Gen Pur Amp Sw
|
|||
2N6109
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
Mospec | 功能相似 |
t-Pnp Si-Gen Pur Amp Sw
|
|||
2N6109G
|
Motorola | 类似代替 |
ON SEMICONDUCTOR 2N6109G. 双极晶体管
|
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