Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | 7.00 A |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 7A |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @2.5A, 4V |
|
Technical parameters/maximum current amplification factor (hFE): | 150 |
|
Technical parameters/rated power (Max): | 40 W |
|
Technical parameters/dissipated power (Max): | 40 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
|
Other/Minimum Packaging: | 50 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6109
|
Multicomp | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
ON Semiconductor | 功能相似 | TO-220-3 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
Magnatec | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
Rectron Semiconductor | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
TT Electronics | 功能相似 |
t-Pnp Si-Gen Pur Amp Sw
|
|||
2N6109
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N6109
|
Mospec | 功能相似 |
t-Pnp Si-Gen Pur Amp Sw
|
|||
2N6109G
|
Motorola | 类似代替 |
ON SEMICONDUCTOR 2N6109G. 双极晶体管
|
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