Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -20.0 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 50A
Technical parameters/minimum current amplification factor (hFE): 15 @25A, 2V
Technical parameters/Maximum current amplification factor (hFE): 60
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Other/Minimum Packaging: 100
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5683
|
NTE Electronics | 类似代替 | TO-3 |
NTE ELECTRONICS 2N5683 Bipolar (BJT) Single Transistor, PNP, -60V, 2MHz, 300W, -50A, 15 hFE
|
||
2N5683
|
Microsemi | 类似代替 | TO-3 |
NTE ELECTRONICS 2N5683 Bipolar (BJT) Single Transistor, PNP, -60V, 2MHz, 300W, -50A, 15 hFE
|
||
2N5684
|
ON Semiconductor | 功能相似 | TO-3 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
||
2N5684
|
Motorola | 功能相似 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
|||
|
2N5684
|
ETC | 功能相似 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
|||
2N5684
|
NTE Electronics | 功能相似 | TO-204 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
||
2N5684G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N5684G 单晶体管 双极, 通用, PNP, -80 V, 2 MHz, 300 W, -50 A, 2 hFE
|
||
JAN2N5684
|
Microsemi | 功能相似 | TO-204 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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