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Technical parameters/polarity: PNP
Technical parameters/dissipated power: 300 W
Technical parameters/DC current gain (hFE): 15
Technical parameters/operating temperature (Max): 200 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5684
|
ON Semiconductor | 类似代替 | TO-3 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
||
2N5684
|
Motorola | 类似代替 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
|||
2N5684
|
ETC | 类似代替 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
|||
2N5684
|
NTE Electronics | 类似代替 | TO-204 |
高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
|
||
2N5684G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N5684G 单晶体管 双极, 通用, PNP, -80 V, 2 MHz, 300 W, -50 A, 2 hFE
|
||
JAN2N5684
|
Microsemi | 功能相似 | TO-204 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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