Technical parameters/dissipated power: 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5680
|
Microsemi | 完全替代 | TO-39 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
||
|
|
National Semiconductor | 完全替代 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
|||
|
|
Fairchild | 完全替代 | TO-39 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
||
2N5680
|
Multicomp | 完全替代 | TO-39 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
||
2N5680
|
Comset Semiconductors | 完全替代 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
|||
2N5680
|
Central Semiconductor | 完全替代 | TO-39 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
||
JANTX2N5680
|
Microchip | 完全替代 |
TO-39 PNP 120V 1A
|
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