Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 40 @250mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ETC | 完全替代 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
|||
|
|
Microchip | 完全替代 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
|||
2N5679
|
Microsemi | 完全替代 | TO-39 |
PNP功率晶体管的硅放大器 PNP POWER TRANSISTOR SILICON AMPLIFIER
|
||
|
|
Microsemi | 类似代替 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JAN2N3635
|
Semicoa Semiconductor | 类似代替 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JAN2N3635
|
ON Semiconductor | 类似代替 | TO-39-3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANTX2N5680
|
Microchip | 完全替代 |
TO-39 PNP 120V 1A
|
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