Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: 40.0 V
Technical parameters/breakdown voltage: 40 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5462
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
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|
|
VISHAY | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
|
Central Semiconductor | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
2N5462
|
Solitron Devices | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
|||
2N5462
|
Vishay Semiconductor | 类似代替 | TO-226 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462
|
Rochester | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462
|
Intel | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
|||
2N5462
|
Vishay Siliconix | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
2N5462
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462
|
Motorola | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462G
|
Rochester | 功能相似 | CASE 29-11 |
JFET放大器P沟道 - 耗尽 JFET Amplifier P−Channel − Depletion
|
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