Technical parameters/rated current: -10.0 mA
Technical parameters/breakdown voltage: 40.0 V|40 V
Technical parameters/polarity: P-Channel
Technical parameters/breakdown voltage of gate source: 40.0 V
Technical parameters/Continuous drain current (Ids): -16.0 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226
External dimensions/packaging: TO-226
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5462
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
|
VISHAY | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
|
Central Semiconductor | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
2N5462
|
Solitron Devices | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
|||
2N5462
|
Vishay Semiconductor | 功能相似 | TO-226 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462
|
Rochester | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462
|
Intel | 功能相似 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
|||
2N5462
|
Vishay Siliconix | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
2N5462
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
2N5462
|
Motorola | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N5462 晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 6 V, TO-92, JFET
|
||
|
|
Vishay Intertechnology | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
2N5462-E3
|
Vishay Siliconix | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
2N5462-E3
|
Vishay Semiconductor | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
|
2N5462G
|
Rochester | 功能相似 | CASE 29-11 |
JFET放大器P沟道 - 耗尽 JFET Amplifier P−Channel − Depletion
|
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