Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/operating temperature (Max): 135 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
|||
|
|
ON Semiconductor | 功能相似 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
|||
2N5209
|
Central Semiconductor | 功能相似 | TO-226-3 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
||
2N5209RLRE
|
ON Semiconductor | 功能相似 | TO-92 |
Trans GP BJT NPN 50V 0.05A 3Pin TO-92 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review