Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @100µA, 5V
Technical parameters/rated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Powerex | 功能相似 |
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Rochester | 功能相似 |
Trans GP BJT NPN 50V 0.05A 3Pin TO-92 Box
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ON Semiconductor | 功能相似 |
Trans GP BJT NPN 50V 0.05A 3Pin TO-92 Box
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2N5209
|
Central Semiconductor | 功能相似 | TO-226-3 |
Trans GP BJT NPN 50V 0.05A 3Pin TO-92 Box
|
||
2N5209LEADFREE
|
Central Semiconductor | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
|
||
2N5209RLRE
|
ON Semiconductor | 功能相似 | TO-92 |
TO-92 NPN 50V 0.05A
|
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