Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 20 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/DC current gain (hFE): 25
Technical parameters/operating temperature (Max): 200 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-72
External dimensions/packaging: TO-72
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N998
|
Solid State | 功能相似 | TO-72 |
SOLID STATE 2N998 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 0.5W(1/2W), 500mA, 8000 hFE
|
||
NTE316
|
NTE Electronics | 功能相似 | TO-72 |
Trans RF BJT NPN 15V 0.05A 3Pin TO-39
|
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