Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/collector breakdown voltage: 30.0 V
Technical parameters/breakdown voltage (collector emitter): 15.0 V
Technical parameters/DC current gain (hFE): 25
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-72
External dimensions/height: 4.82 mm
External dimensions/packaging: TO-72
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412100959
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTE108
|
NTE Electronics | 功能相似 | TO-92 |
NTE ELECTRONICS NTE108 射频晶体管, NPN, 15V, 600MHZ, TO-92
|
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