Technical parameters/rated current: -50.0 mA
Technical parameters/breakdown voltage: 30 V
Technical parameters/drain source resistance: 75.0 Ω
Technical parameters/polarity: P-Channel
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/Continuous drain current (Ids): -90.0 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-18-3
External dimensions/packaging: TO-18-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N5114
|
Solitron Devices | 类似代替 | TO-18 |
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
|
||
JANTXV2N5116
|
Solitron Devices | 类似代替 |
Trans JFET P-CH
|
|||
JANTXV2N5116
|
Microsemi | 类似代替 | TO-18 |
Trans JFET P-CH
|
||
PMBFJ174,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ174,215 晶体管, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET
|
||
PMBFJ176
|
NXP | 功能相似 | SOT-23 |
P-channel silicon field-effect transistors
|
||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
|||
PMBFJ177
|
NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
|
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