Technical parameters/breakdown voltage (collector emitter): 10 V
Technical parameters/minimum current amplification factor (hFE): 25 @1mA, 6V
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC3545-T1B
|
NEC | 功能相似 |
UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
|||
2SC4093-T1-A
|
California Eastern Laboratories | 类似代替 | TO-253-4 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4
|
||
2SC4093-T1-A
|
Renesas Electronics | 类似代替 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4
|
|||
6883
|
California Eastern Laboratories | 功能相似 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, C Band, Silicon, NPN
|
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