Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/gain: 14.2 dB
Technical parameters/minimum current amplification factor (hFE): 50 @20mA, 10V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/length: 2.9 mm
External dimensions/width: 1.5 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TO-253-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5031
|
Microsemi | 类似代替 | TO-206 |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
||
2SC4093
|
NEC | 功能相似 | SOT-143 |
2SC4093 NPN三极管 20V 100mA/0.1A 7GHz 80~160 SOT-143 marking/标记 R27 微波低噪声放大器
|
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