Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -600 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 200 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4403TA
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TA
|
ON Semiconductor | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TAR
|
Fairchild | 功能相似 | TO-226-3 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N4403TFR
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TFR 单晶体管 双极, PNP, 40 V, 250 MHz, 625 mW, 20 hFE
|
||
2N4403TFR
|
ON Semiconductor | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TFR 单晶体管 双极, PNP, 40 V, 250 MHz, 625 mW, 20 hFE
|
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